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# `doped` Future Development WishList | ||
## Defect calculations set up | ||
- CLI Functionality for core functions. | ||
- Could also use some of the `snb` functions to add some convenience commands which `cp CONTCAR | ||
POSCAR` for unconverged `vasp_gam`/`vasp_nkred_std`/`vasp_std` calculations, and copies `CONTCAR`s | ||
to next VASP folder when converged and submits job. | ||
- Defect complexes: Functionality to setup and parse calculations – can do this with new `pymatgen` | ||
code? Note that our defect-centring code is currently not implemented for this! | ||
- Add input file generation for FHI-AIMs, CP2K, Quantum Espresso and CASTEP (using SnB functions), | ||
point to post-processing tools for these online (in docs/example notebooks, `aiida-defects` for QE, | ||
https://github.com/skw32/DefectCorrectionsNotebook for AIMs...), | ||
and give example(s) of how to manually generate a `DefectPhaseDiagram` and chempots from the parsed | ||
energies of these calculations, so the `doped` analysis tools can then be used. | ||
- Add defect expansion code functionality to regenerate defect structures from a smaller supercell in a | ||
larger one. Useful for supercell size convergence tests, and accelerating `ShakeNBreak` etc. If/when | ||
adding, make sure to link in `SnB` docs as well. | ||
- Related point, using our `doped` site-matching functions, could write some quick functions to plot | ||
the exponential tailing off of strain / site displacements as we move away from the defect site. | ||
Could be useful as a validation / check of supercell size convergence, and for quantifying the | ||
strain / distortion introduced by a certain defect (though I guess the `SnB` tools already do a | ||
good job of that) – could possibly give a good rule-of-thumb to aim for with a sufficiently large cell? | ||
- For defect complexes, after electrostatics, the next biggest factor in binding energies is the stress field (right)? Then orbital effects after that. | ||
This means that if we have the distortion field implemented in doped, we should be able to fairly accurately and easily predict if defect complexes are likely? (Via concentrations/formation energies, charges and stress fields?) Nice use case, could mention in JOSS as possible screening application if someone wanted to use it. Deak & Gali Nature Comms (10.1038/s41467-023-36090-2) C-C in Si could be used as a nice test case (neutral so no charge effects) | ||
- Just something to keep in mind; new defect generation code can apparently use oxidation states from | ||
`defect.defect_structure` and map to defect supercell. Not in our current subclass implementation of | ||
`Defect`. Is this useful info? | ||
- Ideally, one should be able to input just defect objects somewhere -> an alternative input to `DefectsGenerator`? | ||
Depends where we want supercell generation to happen. Can input to both `DefectsGenerator` or `DefectsSet` (but it'll just send it to `DefectsGenerator` with `kwargs`). | ||
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## Post-Processing | ||
- Parsing capability for (non-defect) polarons, so they can then be plotted alongside defects on | ||
formation energy diagrams. Main things for this are: | ||
- Input file generation | ||
- Parsing to determine polaron site (so we can then use charge corrections). Use the site of max | ||
displacement / bond length difference for this, and future work could be parsing of charge densities | ||
to get the maximum position. (Note in docs that the user can do this if they want it). | ||
- General plotting (in transition level diagrams) and analysis (e.g. our site displacement/strain | ||
functions). |
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